OPTICAL AND PHOTOVOLTAIC PROPERTIES OF CuSe THIN FILMS
Keywords:
thin films, chemical synthesis, electrical characterization, crystal structureAbstract
Copper selenide thin films have been deposited by spraying a mixture of aqueous solutions (0.50 M) of copper chloride hydrate (CuCl2·2H2O) and selenourea (H2NC (Se) NH2) at various substrate temperatures. The as deposited copper selenide thin films were used to study a wide range of characteristics including structural, surface morphological, optical, electrical, and photovoltaic power output characteristics. X-ray diffraction (XRD) study reveals that the films are polycrystalline in nature with hexagonal (mineral klockmannite) crystal structure. The SEM study reveals that the grains are uniform with uneven spherically shaped and spread over the entire surface of the substrates. The direct band gap values are found to be in the range 2.29-2.36 eV depending on the substrate temperature. The measured values of efficiency (η) and fill factor (FF) are found to be 0.99 % and 0.51 respectively for film deposited at 350oC.
References
I. M. Gratzel, Review article Photoelectrochemical cells, Nature 414 (2001) 338.
II. M. L. Gaur, P. P. Hankare, K. M. Garadkar, S. D. Delekar, V. M. Bhuse, CdSe thin films: morphological, optoelectronic and photoelectrochemical studies, J. Mater. Sci.: Mater. Elect.25 (2014) 190.
III. A.A. Yadav, E.U. Masumdar, Photoelectrochemical performances of n-CdS1− xSex thin films prepared by spray pyrolysis technique, Sol. Ener. 84 (2010) 1445.
IV. A.A. Yadav, E.U. Masumdar, Photoelectrochemical investigations of cadmium sulphide (CdS) thin film electrodes prepared by spray pyrolysis, J. Alloys Compd. 509 (2011) 5394.
V. A. A. Yadav, E.U. Masumdar, Photoelectrochemical performances of indium-doped CdS0.2Se0.8 thin film electrodes prepared by spray pyrolysis, Electrochimica Acta 56 (2011) 6406.
VI. M. R. Asabe, V. P. Ubale, A. H. Manikshete, V. T. Vader, S. V. Rajmane, S. D. Delekar, Properties of electrochemically deposited CdTe thin films: annealing effect, J. Mater. Sci.: Mater. Elect. 24 (2013) 4655.
VII. A.A. Yadav, M.A. Barote, E.U. Masumdar, Photoelectrochemical properties of spray deposited n-CdSe thin films. Sol. Ener.84 (2010) 763.
VIII. M. J. Deen, F. Pascal, Electrical characterization of semiconductor materials and devices-review, J. Mater. Sci.: Mater. Elect. 17 (2006) 549
IX. Y.Z. Li , X.D. Gao, C. Yang, F.Q. Huang, The effects of sputtering power on optical and electrical properties of copper selenide thin films deposited by magnetron sputtering, J. Alloys Compd. 505 (2010) 623.
X. R.S. Mane, C.D. Lokhande, Chemical deposition method for metal chalcogenide thin films, Mater. Chem. Phys. 65 (2000) 1.
XI. PengZou, Lei Wan, Shuhao Pan, MingmingMeng, ZhiqiangGuo, JinzhangXu,Effect of sulfurization in hydrogen sulfide on the properties of Cu(In,Ga)Se2 thin-film absorbers,J. Mater. Sci.: Mater. Elect.24 (2013) 4530.
XII. Jun-feng Han, Cheng Liao, Tao Jiang, Hua-mu Xie, Investigation of chalcopyrite film growth: an evolution of thin film morphology and structure during selenization, J. Mater. Sci.: Mater. Elect.24 (2013) 4636.
XIII. Nam-Hoon Kim, Seongha Oh, Woo-Sun Lee, Non-selenization method using sputtering deposition with a CuSe2 target for CIGS thin film, J. Korean Phys. Soc. 61 (2012) 1177
XIV. Jiajia Li, Huanhuan Kou, Yimin Jiang, Daban Lu, ZhixiangZheng, Chunming Wang, Electrochemical deposition of nanosemiconductor CuSe on multiwalled carbon nanotubes/polyimide membrane and photoelectric property researches, J. Solid State Electrochem 16 (2012) 3097.
XV. Yu Jun Yang, Shengshui Hu, Galvanic synthesis of copper selenides Cu2-xSe and CuSe in alkaline sodium selenosulfate aqueous solution, J. Solid State Electrochem. 19 (2009) 477
XVI. John O. Thompson, Michael D. Anderson, Tim Ngai, Thomas Allen, David C.,Nucleation and growth kinetics of co-deposited copper and selenium precursors to form metastable copper selenides, J. Alloys Compds 509 (2011) 9631.
XVII. J. Ying ChyiLiew, Z. A. Talib, W. Mahmood, M. Yunus, ZulkarnainZainal, Shaari A. Halim, Mohd M. Moksin, Wan MohdYusoff, K. Pah Lim,Structural, morphology and electrical properties of layered copper selenide thin film, Cen. Eur. J. Phys.7 (2009) 379.
XVIII. ZulkarnainZainal, AnuarKassim, MohdZobir Hussein, Chuah Hang Ching, Effect of bath temperature on the electrodeposition of copper tin selenide films from aqueous solution, Mater.Lett.58 (2004) 2199.
XIX. J.M. Villalvilla, J. Gonzalez Velasco, Kinetic study of the formation of copper selenides by copper selenization, Mater. Chem. Phys. 19 (1988) 341.
XX. Zhiqiang Yan, Yu Zhao, Mixue Zhuang, Jun Liu, Aixiang Wei,Solvothermal synthesis of CuInS2 powders and CuInS2 thin films for solar cell application,J. Mater. Sci.: Mater. Elect.24 (2013)5055.
XXI. M. Kemmler, M. Lazell, P. O'Brien, D. J. Otway, Jin-Ho Park, J. R. Walsh, The growth of thin films of copper chalcogenide films by MOCVD and AACVD using novel single-molecule precursors, J. Mater. Sci.: Mater. Electron.19 (2002) 531.
XXII. JCPDS Data Card no. 34-0171.
XXIII. JCPDS Data Card no. 72-1421.
XXIV. Powder Diffraction File, Inorganic phases, Alphabetical Index, JCPDS, PA, 1985, p. 264; 671.
XXV. A.B. Al-Mamun, M.O. Islam, A.H. Bhuiyan,Structural, electrical and optical properties of copper selenide thin films deposited by chemical bath deposition technique, J. Mater. Sci.: Mater. Electro.16 (2005) 263.
XXVI. Andriy V. Kozytskiy, Oleksandr L. Stroyuk, StepanYa.Kuchmiy, Inorganic photoelectrochemical solar cells based on nanocrystalline ZnO/ZnSe and ZnO/CuSe heterostructures, Catalysis Today, 230 (2014) 227.
XXVII. V.D. Das, L. Damodare, A study of band-bending and barrier height variation in thin-film n-CdSe0.5Te0.5photoanodepolysulphide junctions, Solid State Comm. 99 (1996) 7
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